Evaluation of CNTFETs Temperatures and their Performance using High-K Gate Dielectrics to Enhance Nanoelectronic Applications. Nigerian Journal of Applied Physics, [S. l.], v. 2, n. 1, p. 130–141, 2026. DOI: 10.62292/njap-v2i1-2026-55. Disponível em: https://njap.nipngr.org/index.php/njap/article/view/55. Acesso em: 26 jul. 2026.