Evaluation of CNTFETs Temperatures and their Performance using High-K Gate Dielectrics to Enhance Nanoelectronic Applications

Abstract

High-k dielectrics combined with CNTFETs are potential alternative to next-generation nanoelectronics devices when the traditional silicon-based devices are nearing a scaling limit due to increasing leakage current and power dissipation. The performance of Carbon Nanotube Field Effect Transistors (CNTFETs) is examined in this work in relation to temperature change and high-k dielectric constants (high-k gate materials). This paper employed the cylindrical CNTFET model as a tool to examine six dielectric materials, namely SiO_2, Al₂O_3, Y₂O_3, Ta₂O_5, HfO₂ and La₂O₃ at wide temperature range of 300K to 1000K. The key performance parameters that are investigated, include ON current, OFF current, subthreshold swing (SS), drain induced barrier lowering (DIBL), transconductance (gm), output conductance (gd), voltage gain (A_V), and carrier injunction velocity (V_inj). The results show that increasing dielectric constant enhances the ON current, transconductance, and carrier injection velocity due to an improved gate capacitance and a stronger electrostatic control. On the other hand, higher temperatures cause subthreshold swing to deteriorate and OFF current to increase, showing decreased switching efficiency under high thermal circumstances. At 1000K, La₂O₃ outperformed lower-k materials in terms of drive current (7.775e-05A) and carrier transport (6.042e+05m/s). The research also indicates that temperature affects significantly short-channel effects such as DIBL and leakage behavior. As much as the thermal effects need to be put under control to achieve maximum reliable and efficient devices, the integration of high-k dielectrics and CNTFET architectures have immense potential in providing high-performance and low-power applications.