Exploring Ground State Energies and Electronic Band Structures of Bi₂Se₃ and Bi₂Te₃ Topological Insulators: A First-Principles DFT Approach for Spintronic and Thermoelectric Applications
Keywords:
Topological insulators (TIs), Density Functional Theory (DFT), Ground State Energy, Band Structure, Density of States (DOS)Abstract
Topological insulators (TIs) such as Bismuth selenide (Bi₂Se₃) and Bismuth Telluride (Bi₂Te₃) have attracted attention for their unique electronic properties, featuring insulating interiors and conducting surface states protected by time-reversal symmetry. This study uses Density Functional Theory (DFT) to investigate the ground state energies and electronic band structures of these TIs. The calculated ground state energies for Bi₂Se₃ and Bi₂Te₃ are -675,251.44 eV and -796,226.99 eV, aligning closely with experimental data. These results confirm the stability of the materials and their characteristic band gaps and robust surface states. Spin-orbit coupling (SOC) is essential in inducing band inversion at the Γ point, a key feature of TIs. Additionally, the high density of states near the Fermi level in Bi₂Te₃ suggests potential thermoelectric applications. These findings highlight the relevance of Bi₂Se₃ and Bi₂Te₃ in spintronics and quantum computing.
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Copyright (c) 2026 Francis Aungwa, Emmanuel J. Adoyi, Paul E. Akpowaide

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