Evaluation of the Influence of Gate Dielectric Materials on the Temperature Sensitivity of Silicon Nanowire Transistors

Authors

  • Nura Shehu
    Department of Physics, Bayero University, Kano
  • Sulaiman Gana
  • Bahijja Galadima

Keywords:

Electrostatic control, Temperature sensitivity, Transconductance, Nanowire transistors, Dielectric materials

Abstract

Nanowire-based sensors face a persistent bottleneck: improving electrostatic control via high-κ dielectrics often compromises their thermal responsiveness. To resolve this tension, we investigated the temperature-dependent drain current (250 K–450 K) of silicon nanowire transistors employing four distinct gate dielectrics: SiO₂, Al₂O₃, ZrO₂, and HfO₂. Our analysis reveals that the temperature sensitivity is inversely proportional to the dielectric constant (κ). Although HfO₂ (κ=25) provides the strongest gate control and maximum drive current, its superior electrostatic screening actually suppresses the channel's intrinsic thermal carrier-generation effect, resulting in minimal sensitivity. In stark contrast, SiO₂ (κ=3.9) allows the temperature-dependent carrier density to dominate transport, yielding the highest sensitivity, approximately 9×10⁻⁷ A/m/K. We conclude that dielectric engineering is not a one-size-fits-all proposition; rather, the choice of dielectric must be dictated by whether the target application prioritizes drive-current density (HfO₂) or thermal detectivity (SiO₂).

Dimensions

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Published

2026-08-11

How to Cite

Evaluation of the Influence of Gate Dielectric Materials on the Temperature Sensitivity of Silicon Nanowire Transistors (N. Shehu, S. Gana, & B. Galadima, Trans.). (2026). Nigerian Journal of Applied Physics, 2(2), 246-253. https://doi.org/10.62292/njap-v2i2-2026-83

Issue

Vol. 2 No. 2 (2026): Nigerian Journal of Applied Physics - Vol. 2 No. 2

Section

Articles
Copyright & Licensing

Copyright (c) 2026 Nura Shehu, Sulaiman Gana, Bahijja Galadima

Creative Commons License

This work is licensed under a Creative Commons Attribution-NonCommercial 4.0 International License.

How to Cite

Evaluation of the Influence of Gate Dielectric Materials on the Temperature Sensitivity of Silicon Nanowire Transistors (N. Shehu, S. Gana, & B. Galadima, Trans.). (2026). Nigerian Journal of Applied Physics, 2(2), 246-253. https://doi.org/10.62292/njap-v2i2-2026-83